| 摘要 |
PURPOSE: A method for forming an inter-metal dielectric(IMD) of a semiconductor device is provided, which is appropriate for protecting the semiconductor device from a plasma damage and for realizing a void free gap fill characteristics without edge cut of a metal. CONSTITUTION: According to the method, a metal interconnect line(22) is formed on a semiconductor substrate(21), and then an FSG(Fluorine-doped Silicate Glass) film(23) is formed on the metal interconnect line by an APCVD(Atmosphere Chemical Vapor Deposition) or a SACVD(Sub Atmosphere Chemical Vapor Deposition) using an absorption property of ozone(O3). Because the FSG film is deposited by a surface migration when using ozone, a good gap fill characteristics is obtained, and the degradation of the semiconductor device characteristics due to the plasma damage is prevented, and an edge cut of the metal interconnect line is also prevented.
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