| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper thin film forming method which can form a dense copper thin film with a surface having a specular gloss and with a satisfactory specific resistance, by using Cu (hfac)(AOTMS) and Cu (hfac)(VOTMS) which are new materials for forming a copper thin film with a chemical vapor deposition method. SOLUTION: This copper thin-film forming method for forming a copper thin film on a substrate by introducing a source gas in a substrate treatment chamber of a reduced pressure condition after accommodating the substrate, comprises introducing an additive gas, along with the source gas which is a vaporized gas of Cu (hfac)(AOTMS) or Cu (hfac)(VOTMS), into the substrate treatment chamber during a film forming process, or comprises introducing the source gas which is a vaporized gas of Cu (hfac)(AOTMS) or Cu (hfac)(VOTMS) and additives, instead of introducing the additive gas into the substrate treatment chamber during the film forming process.
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