| 摘要 |
<p>The invention relates to a circuit generating a voltage signal which is independent of temperature and little sensitive to process variables, comprising at least an output MOS transistor (TMOUT) wherethrough an output current (IOUT) flows, it being connected to a first voltage reference (GND) and having a gate terminal (GOUT) connected to a bias network (11), in its turn connected between a second voltage reference (Vcc) and the first voltage reference (GND). The circuit of this invention includes a bias network (11) comprising at least first (TM1) and second (TM2) MOS transistors connected in a diode configuration, connected in series with each other between said first (GND) and second (Vcc) voltage references, and connected to the second voltage reference (Vcc) through a current generator element (12) having a thermal gradient equal to the thermal gradient of a MOS transistor. <IMAGE></p> |
