| 摘要 |
PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to reduce contact resistance and to prevent a leakage current through the contact hole, by forming a nitride layer pad in a portion where a contact is to be formed. CONSTITUTION: An impurity adhesion layer is formed on a semiconductor substrate(31). A nitride layer used as an etch stop layer in etching the contact hole is formed on the entire surface including the impurity adhesion layer. The nitride layer is selectively etched to form the nitride layer pad(39a,39b) on the impurity adhesion layer. An interlayer dielectric is formed on the entire surface including the nitride layer pad. The interlayer dielectric is selectively etched to expose the nitride layer pad. The exposed nitride layer pad is selectively etched to form the contact hole exposing the impurity adhesion layer.
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