METHOD FOR FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor integrated circuit device is provided to give a uniform thickness over the main surface of a semiconductor having a high pattern density region and a low pattern density region, by depositing a silicon nitride film. CONSTITUTION: A flow rate ratio of ammonia(NH3) to monosilane(SiH4) greater than that upon deposition of the silicon nitride film over a flat substrate is set by using a single-wafer cold-wall thermal chemical vapor deposition(CVD) reactor upon depositing a silicon nitride film over a substrate. The substrate has a high gate-electrode-pattern density region and a low gate-electrode-pattern density region.