发明名称 |
Method for forming CMOS sensor |
摘要 |
The present invention is related to a method for forming a CMOS image sensor device. A CMOS image device has a first MOS device acting as a source follower of an active pixel, a second MOS device acting as a row select of the active pixel. An amorphous silicon layer acts as a photo-diode area for collecting incident light over the first MOS device and the second MOS device. The amorphous silicon layer has both N-type and P-type dopants.
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申请公布号 |
US6344368(B1) |
申请公布日期 |
2002.02.05 |
申请号 |
US20000603628 |
申请日期 |
2000.06.26 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
PAN JUI-HSIANG |
分类号 |
H01L27/146;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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