发明名称 |
Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
摘要 |
A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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申请公布号 |
US6344432(B1) |
申请公布日期 |
2002.02.05 |
申请号 |
US20000732370 |
申请日期 |
2000.12.08 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
WOJTCZAK WILLIAM A.;SEIJO MA. FATIMA;BERNHARD DAVID;NGUYEN LONG |
分类号 |
C11D3/20;C11D7/02;C11D7/26;C11D7/28;C11D7/32;C11D7/34;C11D7/50;C11D7/60;C11D11/00;C23G5/02;G03F7/42;H01L21/02;H01L21/304;H01L21/306;H01L21/311;H01L21/3213;(IPC1-7):C11D9/04;B08B6/00;C03C23/00 |
主分类号 |
C11D3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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