发明名称 Integrated ESD protection method and system
摘要 An ESD structure is created on an integrated circuit by providing a conductive polymer material between a signal line and a supply node or ground reference. The conductive polymer material becomes conductive when an electric field of sufficient intensity is applied. In one embodiment, the concentration of conductive particles of the conductive polymer material is empirically determined so that the resulting film becomes conducting at a predetermined threshold voltage. The conductive polymer is applied in liquid form on the wafer surface using a silk-screen printing process or a spin-on process and then cured. The conductive polymer layer can be adapted for use in multilevel metallization systems.
申请公布号 US6344412(B1) 申请公布日期 2002.02.05
申请号 US20000522725 申请日期 2000.03.10
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 ICHIKAWA STEVEN;MEKDHANASARN BOONMI;AHMED ABDUL R.
分类号 H01L21/768;H01L23/60;(IPC1-7):H01L21/44 主分类号 H01L21/768
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