发明名称 |
Multilayered quantum conducting barrier structures |
摘要 |
A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between said semiconductor regions. An undoped amorphous silicon layer continuously coats these two semiconductor regions and insulating layer. The surface of the undoped amorphous silicon layer is nitridized to produce a superficial film of a nitride based material to form the desired quantum conducting barrier (QCB). A stack consisting of at least one dual layer comprised of a bottom undoped amorphous silicon layer and a top dopant monolayer is formed on said undoped amorphous silicon layer. After thermal processing, the MQCB structure operates as a strap allowing an electrical continuity between these semiconductor regions through the QCB by a quantum mechanical effect.
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申请公布号 |
US6344673(B1) |
申请公布日期 |
2002.02.05 |
申请号 |
US20000607214 |
申请日期 |
2000.06.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AUSSILHOU CAROLINE;BUCHET CORINNE;RAFFIN PATRICK;RODIER FRANCIS;ROUSSEAU JEAN-MARC |
分类号 |
H01L21/8242;H01L29/88;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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