发明名称 |
Method of forming copper interconnect capping layers with improved interface andadhesion |
摘要 |
The integrity of the interface and adhesion between a barrier or capping layer and a Cu or Cu alloy interconnect member is significantly enhanced by delaying and/or slowly ramping up the introduction of silane to deposit a silicon nitride capping layer after treating the exposed planarized surface of the Cu or Cu alloy with an ammonia-containing plasma. Other embodiments include purging the reaction chamber with nitrogen at elevated temperature to remove residual gases prior to introducing the wafer for plasma treatment. |
申请公布号 |
AU7527301(A) |
申请公布日期 |
2002.02.05 |
申请号 |
AU20010075273 |
申请日期 |
2001.06.04 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
MINH VAN NGO;HARTMUT RUELKE;LOTHAR MERGILI;JOERG HOHAGE;LU YOU;ROBERT A. HUERTAS;RICHARD HUANG |
分类号 |
H01L21/3205;H01L21/318;H01L21/768;H01L23/52 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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