发明名称 |
Power semiconductor device having low on-resistance and high breakdown voltage |
摘要 |
A power semiconductor device having low on-resistance and a high breakdown voltage is disclosed. The power semiconductor device can be a high power MOS transistor or an insulation gate bipolar transistor. The power semiconductor device has unit cells formed in parallel body region strips. A highly-doped drift layer of the same conductivity type as that of a drift region is provided between adjacent body region strips in a unit cell. Both ends of each of the body region strips of the unit cell are connected to a single frame region. This prevents a depletion region of a spherical or cylindrical type from being formed on an edge of the body region, and in so doing, increases a breakdown voltage of the device.
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申请公布号 |
US6344676(B1) |
申请公布日期 |
2002.02.05 |
申请号 |
US20000533824 |
申请日期 |
2000.03.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN CHONG-MAN;KIM TAE-HOON;JANG HO-CHEOL;CHOI YOUNG-CHULL |
分类号 |
H01L29/06;H01L29/08;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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