发明名称 PIERCING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To form high-precision through holes capable of coping with increase in input/output pads of silicon chips and preventing deformation or deterioration in a sheet material, or deformation in the through holes caused by heat radiation failure of working heat when the through holes arranged in a nearly lattice state with narrow intervals are formed by irradiating a laser beam. SOLUTION: In a piercing method which forms the through holes arranged in a nearly lattice state by irradiating the laser beam on a preset sheet, a piercing point which positions nearly center part of the nearly lattice arrangement is used as a starting point and the laser beam is irradiated while the boring point is shifted from this starting point toward the outer side nearly concentrically. Especially, it is desirable to form the through holes at every boring point by repeating a process which irradiates the laser beam on every boring point arranged in a nearly lattice state at lest at every one pulse several times.</p>
申请公布号 JP2002035977(A) 申请公布日期 2002.02.05
申请号 JP20000231743 申请日期 2000.07.31
申请人 KYOCERA CORP 发明人 TATENO SHUICHI;HAYASHI KATSURA
分类号 B23K26/00;B23K26/08;B23K26/38;B23K101/42;H05K1/03;H05K3/00;(IPC1-7):B23K26/00 主分类号 B23K26/00
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