发明名称 Pattern forming method using charged particle beam process and charged particle beam processing system
摘要 A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.
申请公布号 US6344115(B1) 申请公布日期 2002.02.05
申请号 US19990417996 申请日期 1999.10.13
申请人 HITACHI, LTD. 发明人 AZUMA JUNZOU;SHIMASE AKIRA;HAMAMURA YUICHI;KOIKE HIDEMI
分类号 H01J37/305;C23C16/26;H01J37/18;H01L21/027;H01L21/302;H01L21/3065;(IPC1-7):C23C14/00;A61N5/00;G21G5/00;C03C15/00 主分类号 H01J37/305
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