发明名称 Pulsed-mode RF bias for sidewall coverage improvement
摘要 The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.
申请公布号 US6344419(B1) 申请公布日期 2002.02.05
申请号 US19990454355 申请日期 1999.12.03
申请人 APPLIED MATERIALS, INC. 发明人 FORSTER JOHN;GOPALRAJA PRABURAM;STIMSON BRADLEY O.;HONG LIUBO
分类号 C23C14/34;C23C14/04;H01J37/32;H01J37/34;H01L21/203;H01L21/205;H01L21/285;H01L21/768;(IPC1-7):H01L21/30;H01L21/20 主分类号 C23C14/34
代理机构 代理人
主权项
地址