发明名称 |
A method for forming an antifuse |
摘要 |
According to the preferred embodiment, an antifuse structure and method for personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment antifuse comprises a two layer transformable insulator core between two electrodes. The transformable core is normally non-conductive but can be transformed into a conductive material by supplying a sufficient voltage across the electrodes. The two layer core preferably comprises an injector layer and a dielectric layer. The injector layer preferably comprises a two phase material such as silicon rich nitride or silicon rich oxide. Initially, the injector layer and dielectric layer are non-conductive. When a sufficient voltage is applied the core fuses together and becomes conductive.
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申请公布号 |
US6344373(B1) |
申请公布日期 |
2002.02.05 |
申请号 |
US19980106980 |
申请日期 |
1998.06.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BHATTACHARYYA ARUP;GEFFKEN ROBERT M.;LAM CHUNG H.;LEIDY ROBERT K. |
分类号 |
H01L21/82;H01L23/525;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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