| 摘要 |
A method of production of a semiconductor device able to be miniaturized by preventing the decline of the hfe at a low current caused by an increase of a surface recombination current of a bipolar transistor and forming the external base region by self-alignment with respect to emitter polycrystalline silicon in the BiCMOS process. An intrinsic base region of a first semiconductor element is formed, an insulating film having an opening at an emitter formation region of part of the intrinsic base region is formed, and then an emitter electrode of the first semiconductor element and a protective film are formed on an insulating film having the opening. Next, a sidewall insulating film is left on the gate electrode side portion. Simultaneously, the insulating film is removed while partially leaving the emitter region forming-use insulating film under the emitter electrode. Further, the external base region connected to the intrinsic base region is formed on the semiconductor substrate surface by self-alignment with respect to the emitter electrode.
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