NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: To provide a nonvolatile semiconductor memory device capable of suppressing the dispersion of electric field resistance and preventing voltage resistance from being lowered without expanding a chip area. CONSTITUTION: This nonvolatile semiconductor memory device is provided for rewriting stored information corresponding to the charge quantity of a dielectric substance, and equipped with a ferroelectric film 1 which has history characteristics in the dependency of a dielectric flux density D and an electric field E, and a non-linear element 2 electrically connected with that ferroelectric film 1. Concerning this non-linear element 2, the increase quantity of the positive dielectric flux density D corresponding to the electric field E in the dependency of the dielectric flux density D and the electric field E is small in a low electric field area and large in a high electric field area.