| 摘要 |
PURPOSE: To provide a semiconductor device where integration degree can be improved by enhancing the degree of freedom for arranging a fuse in the semiconductor device having the fuse by which a connections is switched to a redundant circuit. CONSTITUTION: A third interlayer insulating film 23 is arranged to cover a second wiring layer 10, and a plurality of contact parts 12 that reach the second wiring layer 10 through the third interlayer insulating film 23 are arranged. The contact parts 12 are configured to fill a via hole penetrating the third interlayer insulating film 23 with a high melting-point metal such as tungsten. In addition, between two contact parts 12 in the interlayer insulating film 23, the fuse 13 is arranged to be connected to both the contact parts electrically, and the fuse 13 also consists of the same high melting-point metal as that of the contact parts 12. |
