| 摘要 |
PURPOSE: A method for fabricating a fine pattern of a semiconductor device is provided to improve a process margin and yield by performing a tri-layer resist(TLR) process twice wherein an intermediate layer having two kinds of etch selectivities and an exposure mask having mutually alternating mask layer patterns are used. CONSTITUTION: A lower photoresist layer(6) is formed on an etch target layer(7) on a substrate(9). The first intermediate layer(5) made of a material having different etch selectivity from the photoresist layer is formed on the lower photoresist layer. The first upper photoresist layer(4) is formed on the first intermediate layer. The first upper photoresist layer is selectively exposed to form the first upper photoresist layer pattern. The exposed first intermediate layer is eliminated to form the first intermediate layer pattern. The first upper photoresist layer pattern is removed. The second intermediate layer pattern is formed. The second upper photoresist layer is formed on the second intermediate layer pattern. The second upper photoresist layer is selectively exposed to form the second upper photoresist layer pattern alternating with the first upper photoresist layer pattern. The second intermediate layer exposed by the first and second upper photoresist layer patterns is removed to form the second intermediate layer pattern. The lower photoresist layer exposed by the first and second intermediate layer pattern is removed to form a lower photoresist layer pattern. The etch target layer exposed by the lower photoresist layer pattern is removed to form an etch target layer pattern.
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