SEMICONDUCTOR DEVICE CAPABLE OF REDUCING PARASITIC CAPACITANCE CAUSED BY INTERCONNECTION AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to control resistant capacitor delay in an interconnection of a high integrated semiconductor device, by forming an interconnection trench of a uniform depth in a low dielectric organic silicon oxide layer. CONSTITUTION: An inorganic silicon oxide layer(13) and an organic silicon oxide layer(15) are sequentially stacked on a substrate(10). A partial trench(17') having the same depth as the organic silicon oxide layer is formed in the organic silicon oxide layer through a patterning process. An oxygen treatment process is performed regarding the surface of the inner wall of the partial trench. A hydrofluoric acid wet etch is performed regarding the partial trench to complete a trench.