| 摘要 |
PURPOSE: A method for manufacturing a high dielectric thin film is provided to prevent thermal stability of a lower electrode and a barrier metal from being degraded by a high temperature heat treatment process and to densify the structure of the thin film, by using a material added with a boron precursor so that barium strontium titanate(BST) is generated at a low temperature. CONSTITUTION: The high dielectric thin film is formed by using a high dielectric precursor added with the boron precursor. The high dielectric is one of SrTiO3(STO), (Ba,Sr)TiO3(BST), (Pb,La)TiO3(PLT), Pb(Zr,Ti)O3(PZT) or (Sr,Bi)TaO3(SBT). The boron precursor is one of a boron-isopropoxide material, B2H6 gas or boron-ethoxide material.
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