| 摘要 |
PURPOSE: A method for forming a lower electrode of a capacitor is provided to reduce the thickness of a dielectric layer, by improving an interface characteristic between the dielectric layer of a perovskite structure and the lower electrode. CONSTITUTION: An insulation layer(13) formed on a semiconductor substrate(11) is patterned to form a contact hole exposing a junction part(12). A plug(14) is formed in the contact hole. After a diffusion barrier layer(15) is formed on the entire surface to be connected to the plug, a sacrificial metal layer is formed on the diffusion barrier layer. An oxide conductive layer is formed on the sacrificial metal layer. The oxide conductive layer, the sacrificial metal layer and the diffusion barrier layer are sequentially patterned to form the lower electrode(17a).
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