发明名称 |
INDUCTIVE COUPLED PLASMA ETCHER |
摘要 |
PURPOSE: An inductive coupled plasma etcher is provided to increase plasma density and uniformity in the center portion of a chamber, by making radio frequency power having the same frequency as in an outer antenna applied to an inner antenna having the second induction coil when the radio frequency power is supplied to the outer antenna. CONSTITUTION: Predetermined vacuum is maintained in a process chamber. An insulation plate(118) is installed on the process chamber. An inductive coupled plasma generation unit(120) is installed on the ceramic plate formed on the process chamber. The inductive coupled plasma generation unit has the outer antenna(122) and the inner antenna(126) independently positioned inside the outer antenna. The first and second induction coils(124,128) are formed in the outer and inner antennas, respectively. When the radio frequency power is supplied to the outer antenna, the radio frequency power having the same frequency as in the outer antenna is applied to the inner antenna having the second induction coil by a mutual induction of the first and second induction coils.
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申请公布号 |
KR20020010472(A) |
申请公布日期 |
2002.02.04 |
申请号 |
KR20010031916 |
申请日期 |
2001.06.08 |
申请人 |
NEXTECH SOLUTION CO., LTD. |
发明人 |
JANG, GEUN GU;LEE, SEUNG HUN;MUN, JONG;SON, JAE HYEON |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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