METHOD FOR GENERATING DEFECTS IN A GRID SUPPORT OF A SEMICONDUCTOR MATERIAL,申请号KR1020017014005-传众专利搜索

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发明名称	METHOD FOR GENERATING DEFECTS IN A GRID SUPPORT OF A SEMICONDUCTOR MATERIAL
摘要
申请公布号	KR20020010629(A)	申请公布日期	2002.02.04
申请号	KR1020017014005	申请日期	2001.11.02
申请人		发明人
分类号	H01L21/22	主分类号	H01L21/22
代理机构		代理人
主权项
地址

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