| 摘要 |
PURPOSE: To provide a semiconductor memory which can operate at high speed by decreasing wiring resistance and capacitance of a signal line of a data input/ output part. CONSTITUTION: This semiconductor memory comprises plural input/output terminals, a memory cell array consisting of blocks corresponding to each of plural input/output terminals, plural sense amplifiers provided adjacent to each of the blocks for sensing data of the memory cell array, plural switches corresponding to plural sense amplifiers, and signal wirings connecting the plural sense amplifiers to one terminal corresponding to the plural input/output terminals through the plural switches.
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