METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to minimize defective openings and damage caused by over-etch, by easily controlling an etch process for forming a contact hole and by using an optimized etch condition according to the depth of an etch layer. CONSTITUTION: A spacer(380) is formed on the sidewall of a gate electrode(370) formed on a substrate(300), and an interlayer dielectric is formed on the resultant structure. A predetermined region of the interlayer dielectric is etched by using etch gas. The first etch process is performed until the quantity of light radiation of a compound generated by making the etch gas react with the spacer is maximized. The second etch process is performed until the substrate is exposed.