METHOD FOR FORMING DUAL GATE OXIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A dual gate oxide formation method of semiconductor devices is provided to improve qualities of the dual gate oxide by performing HCl annealing after forming the dual gate oxide. CONSTITUTION: A first and a second active regions are defined in a semiconductor substrate(200). A first gate oxide is then formed on the first and second active regions(210). The first gate oxide formed on the first active region is removed by using a mask pattern as an etch mask(220). After removing the mask pattern, a second gate oxide is formed on the resultant structure(230). An annealing process is then carried out by in-situ using HCl gases(240).