| 摘要 |
PURPOSE: A method for cleaning a semiconductor device is provided to remove slurry residues and pad residues by performing an alkali cleaning process and a vitriolic cleaning process or an oxygen plasma ashing process. CONSTITUTION: An alkali cleaning process is performed to remove slurry residues of a silica component. A vitriolic cleaning process or an oxygen plasma ashing process is performed to remove pad residues of a polyurethane component. The alkali cleaning process is 1 batch 1drain method. The amount of the slurry residues within a bath is minimized by performing the alkali cleaning process. A mixture of NH4OH, H2O2, and deionized water is used as an alkali cleaning solution. The alkali cleaning process is performed during 30 or more minutes by using the alkali cleaning solution. In the vitriolic cleaning process, a mixture of H2SO4 and H2O2 is used as a vitriolic cleaning solution. The vitriolic cleaning process is performed during 10 to 20 minutes under a temperature of 100 or more degrees centigrade.
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