发明名称 METHOD FOR SIMULATING PLASMA PROCESS
摘要 PURPOSE: A method for simulating a plasma process is provided to optimize a plasma process according to a variation of plasma process and extract a physical model set of a surface from a simulation process. CONSTITUTION: Kinds of ions and an energy distribution function are obtained according to variation of a plasma process by performing a plasma simulation process. A sputter yield function is obtained according to incident ions by performing a molecular dynamic simulation process. A configuration simulation surface model parameter is obtained by combining the energy distribution function obtained from the plasma simulation process with a value of the surface reaction parameter obtained from the molecular dynamic simulation process. A surface configuration is obtained by performing the simulation using the surface reaction parameter.
申请公布号 KR20020009210(A) 申请公布日期 2002.02.01
申请号 KR20000042749 申请日期 2000.07.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, TAE GYEONG;LEE, GYU SANG
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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