发明名称 |
METHOD FOR SIMULATING PLASMA PROCESS |
摘要 |
PURPOSE: A method for simulating a plasma process is provided to optimize a plasma process according to a variation of plasma process and extract a physical model set of a surface from a simulation process. CONSTITUTION: Kinds of ions and an energy distribution function are obtained according to variation of a plasma process by performing a plasma simulation process. A sputter yield function is obtained according to incident ions by performing a molecular dynamic simulation process. A configuration simulation surface model parameter is obtained by combining the energy distribution function obtained from the plasma simulation process with a value of the surface reaction parameter obtained from the molecular dynamic simulation process. A surface configuration is obtained by performing the simulation using the surface reaction parameter.
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申请公布号 |
KR20020009210(A) |
申请公布日期 |
2002.02.01 |
申请号 |
KR20000042749 |
申请日期 |
2000.07.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, TAE GYEONG;LEE, GYU SANG |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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