| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a short between adjacent node contacts by using a titanium(Ti) metal as a filling material instead of a polysilicon. CONSTITUTION: A plurality of gate lines formed sequentially a gate oxide(32), a gate electrode(33) and a cap insulating layer(34) on a semiconductor substrate(31) are formed at spaced apart from each other. Then, gate spacers(35) are formed at both sidewalls of the gate lines. An interlayer dielectric(36) is formed on an entire surface of the resultant structure. After planarizing the interlayer dielectric(36), the interlayer dielectric(36) is selectively etched so as to form a contact hole. By filling a titanium film(37) into the contact hole, a node contact is formed.
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