发明名称 |
Lavströms sensor |
摘要 |
The invented MOSFET array gas sensor has been fabricated using silicon bulk micro machining. A heating resistor, a diode used as temperature sensor and 4 gas-sensitive FETs are located in a silicon island suspended by a dielectric membrane. The membrane has a low thermal conductivity coefficient and therefore thermally isolates the electronic components on the silicon island from the chip frame. This low thermal mass device allows the reduction of the power consumption to a value of 80 mW for an operating temperature of 175 DEG C. This low power MOSFETs gas sensor array is suitable for applications in portable gas sensors instruments and in automobiles. |
申请公布号 |
NO20015916(A) |
申请公布日期 |
2002.02.01 |
申请号 |
NO20010005916 |
申请日期 |
2001.12.04 |
申请人 |
APPLIEDSENSOR SWEDEN AB |
发明人 |
BRIAND, DANIEK;SCHOOT, BART VAN DER;ROOIJ, NICOLAAS F DE;SUNDGREN, HANS;LUNDSTROEM, INGEMAR |
分类号 |
G01N27/12;G01N27/00;G01N27/414;(IPC1-7):G01N27/414 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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