METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method wherein a deposition material is removed surely and effectively from a barrier film without any damages in a contact hole etching including the barrier film. CONSTITUTION: A method is provided for manufacturing a semiconductor device which includes the first insulation film and the barrier film on a conductive region and an opening in a first insulation film and the barrier film. The purpose is achieved by the method for manufacturing the semiconductor device comprising a step of forming the first opening reaching the first insulation film in the barrier film, a step of forming a second insulation film at least overlying the first insulation film of the first opening and a step of forming the second opening smaller than the first opening reaching the conductive region by opening the first and the second insulation films by one operation within the first opening.