SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

摘要

PURPOSE: To surely form a fine DRAM concerning a production method for a semiconductor device having a contact hole to be formed in the manner of self-matching. CONSTITUTION: A transfer gate(TG) housing grove is formed on a first layer insulating film 44 formed on a silicon substrate 10. Inside the groove, a TG 33 provided with a side wall 34 is formed. On the condition of selectively removing the first layer insulating film 44, the contact hole is formed at a part adjacent to the TG 33 in the self-matching manner and inside that contact hole, a contact plug 50 is formed. On the upper layer thereof, a bit line 60 or capacitor conducted with the contact plug 50 is formed.