| 摘要 |
PURPOSE: A transistor of a salicide structure in a semiconductor device and a method for fabricating the same are provided to form stably a silicide layer or a salicide layer by forming a dopant diffusion region after completing the salicide layer or the silicide layer. CONSTITUTION: An insulating layer(21), the first polysilicon layer(23), and the second polysilicon layer are deposited sequentially on a semiconductor substrate(20). A gate insulating layer(22) and a gate electrode(240) are formed by patterning the second polysilicon layer, the first polysilicon layer(23), and the insulating layer(21). A low density doping region(25) of the second conductive type is formed on the semiconductor substrate(20) of a side of the gate electrode(240). A metal layer for silicide is formed on the whole surface of the semiconductor substrate(20). The first silicide layer(271') and the second silicide layer(272') are formed by reacting the metal layer with the second polysilicon layer and the low density doping region(25). The remaining metal layer is removed. A high density doping region(28) of the second conductive type is formed on the semiconductor substrate(20) by using the gate electrode(240) and a sidewall spacer(26) as a mask.
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