| 摘要 |
PURPOSE: A photoresist pattern formation method is provided to simplify the manufacturing processes, to reduce the manufacturing costs and to remove particles due to polymers by increasing line width of the photoresist pattern having FICD(Final Inspection Critical Dimension) using a mask reflow. CONSTITUTION: A gate oxide(21), a gate(22) and a gate cap insulator(23) are sequentially formed on a silicon substrate(20). After forming a spacer(24) at both sidewalls of the gate pattern, a polysilicon(25) is deposited on the resultant structure. A photoresist pattern having a first line width with a DICD(Develope Inspection Critical Dimension) is formed on the polysilicon(25). By annealing the resultant structure in a UV bake in order to increase the line width of the photoresist pattern, a photoresist pattern(260) having a second line width with an FICD is formed, wherein the second line width having the FICD is wider than of the first line width having the DICD. By etching the exposed polysilicon(25) using the photoresist pattern having the second line width, a polysilicon plug pad is formed.
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