| 摘要 |
PURPOSE: Provided is a chemical mechanical polishing(CMP) composition, which can reduce the generation of mu-scratch after polishing and can be used as a polishing agent for a wafer of a semiconductor. CONSTITUTION: The CMP composition comprises 0.1-50wt% of at least one metal oxide selected from the group consisting of SiO2, Al2O3, CeO2, ZrO2, and TiO2, 45-99wt% of deionized water, and 0.01-10wt% of a polyether modified dimethylsiloxane comprising the repeat unit(formula), wherein x, y, n, and m are independently integers of 20-100, and R1 is -H or -CH. |
