| 摘要 |
PROBLEM TO BE SOLVED: To provide the copper metal wiring formation method of a semiconductor device that can reproduce copper deposition process, and at the same time, can obtain a copper thin film having superior film quality. SOLUTION: This copper metal wiring formation method of the semiconductor device includes a stage that patterns the specific region of an interlayer insulating film 13 formed on a semiconductor substrate 10 for forming a damascene pattern before cleaning, a stage that forms a diffusion preventing film 14 on entire structure including the damascene pattern, a stage that forms a chemical reinforcement agent layer 15 on the surface of the diffusion preventing film, a stage that carries out wet dip cleaning and warm annealing for removing the chemical reinforcement agent at a remaining part other than the bottom part of the damascene pattern, a stage that forms a copper layer 17 so that the damascene pattern can be embedded, and a stage that polishes the copper layer for forming copper metal wiring 17a.
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