| 摘要 |
PROBLEM TO BE SOLVED: To provide a sidewall capacitor in an integrated circuit containing double-damascene structure. SOLUTION: The integrated circuit has both the double-damascene structure and the capacitor and a metallization level. The structure is included into the metallization level, thus eliminating the need for additional treatment processes, when the different structure is formed. It should be understood that the above items mentioned and following detailed explanation are instances, and do not restrict the present invention.
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