发明名称 |
SELF-ALIGNED METAL SILICIDE |
摘要 |
A structure of self-aligned metal silicide. A gate oxide layer is formed on a substrate. A gate with a sidewall and a top surface thereof is formed on the gate oxide layer. A first silicidation step is performed to form a first metal silicide layer on both the sidewall and the top surface. A spacer is formed to cover the first metal silicide layer on the sidewall of the gate. An ion implantation is performed to form a source/drain region in the substrate with the gate as a mask. A second silicidation step is formed to form a second metal silicide layer on the source/drain region.
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申请公布号 |
US2002011631(A1) |
申请公布日期 |
2002.01.31 |
申请号 |
US19990293419 |
申请日期 |
1999.04.16 |
申请人 |
HONG GARY |
发明人 |
HONG GARY |
分类号 |
H01L21/28;H01L21/336;H01L29/49;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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