Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure

摘要

A semiconductor manufacturing method has the steps of preparing an SOI substrate having a supporting substrate, an insulating film formed above the supporting substrate, a semiconductor region formed above the insulating film, and an intermediate layer formed between the supporting substrate and the insulating film, forming a semiconductor element in the semiconductor region, and removing the intermediate layer to separate the supporting substrate and the semiconductor region in which the semiconductor element is formed.