Production of a quasi substrate used in the production of a laser diode comprises forming an intermediate layer made of a group III nitride doped with oxygen between a utilizing layer based on gallium nitride and a sapphire base substrate

摘要

Production of a quasi substrate (1) comprises forming an intermediate layer (3) made of a group III nitride doped with oxygen between a utilizing layer (4) based on GaN and a sapphire base substrate (2). Preferred Features: The intermediate layer is grown at 500-800 deg C. The concentration of oxygen lies above 0.0003 volume % in an epitaxy reactor used for growing the intermediate layer. The oxygen concentration is 0.0007-0.001 volume %. The surface of the base substrate is purified by nitriding before depositing the intermediate layer. The utilizing layer is grown by epitaxy at 950-1050 deg C on the intermediate layer.