SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce a dielectric constant and to improve a step coverage of an interlayer dielectric containing a coating insulating layer. CONSTITUTION: A coating insulating layer(26) is formed on a semiconductor substrate by coating a coating liquid containing, wherein the coating liquid is one selected from a group consisting of a silicon-contained inorganic compound and a silicon-contained organic compound. A protection layer(27) is formed on the coating insulating layer(26) by plasma treatment a first film formation gas to react. At this time, the first film formation gas is one selected from a group consisting of an alkoxy compound having Si-H bonds, a siloxane having Si-H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, CO, CO2, and H2O.