发明名称 FUNCTION DEVICE UNIT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a function device unit which can be improved in reliability and performance and its manufacturing method. SOLUTION: A recessed part 12 is formed on the top surface of a silicon substrate 11, and a wiring layer 13 which extends from the bottom surface of the recessed part 12 to the top surface through the side is formed to obtain a base 10 for mounting. A semiconductor chip 14 is flip-chip mounted on this base 10.
申请公布号 JP2002033410(A) 申请公布日期 2002.01.31
申请号 JP20010137735 申请日期 2001.05.08
申请人 MITSUTOYO CORP 发明人 TOMINAGA ATSUSHI
分类号 H01L27/14;H01L21/60;H01L23/12;H01L25/04;H01L25/18;H01L31/02;H01L33/44;H01L33/62 主分类号 H01L27/14
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