| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning a semiconductor process chamber using molecular fluorine (F2) gas as a principal precursor reagent. SOLUTION: In this method, residue is eliminated from the interior of the semiconductor process chamber, using molecular fluorine (F2) gas as the principal precursor reagent. In one embodiment, a portion of the molecular fluorine is decomposed by a plasma, atomic fluorine is formed, and the resulting mixture gas of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment, the molecular fluorine gas cleans the inside of the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds which are used conventionally for chamber cleaning, such as NF3, C2F6 and SF6.
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