<p>A GaN based LED comprises: a three layer buffer (11) which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure (12); and complementary N and P electrode structures (115, 113) which spread current flowing between the electrodes fully across the light emitting structure (12).</p>
申请公布号
WO0209475(A2)
申请公布日期
2002.01.31
申请号
WO2001US23452
申请日期
2001.07.25
申请人
AMERICAN XTAL TECHNOLOGY, INC.;CHEN, JOHN;LIANG, BINGWEN;SHIH, ROBERT
