| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting diode which has a sufficient light emitting area and is excellent in quantum efficiency and linearity though the diode uses a substrate in which low-dislocation density areas and high-dislocation density areas alternately exist like the ELOG-grown substrate. SOLUTION: The LED chip of this nitride semiconductor light emitting diode is formed in such a large area that contains a plurality of low-dislocation density areas 34 and high-dislocation density areas 32 by using a nitride semiconductor substrate 16 in which the areas 34 and 32 alternately exist in short cycles and currents are concentrated to the areas 34 by means of current barrier layers 24 provided under a p-electrode 26. The barrier layers 24 can be formed by using AlGaN, etc., which forms a Schottky junction with the p-electrode 26. |
