Temperature compensated vertical pin probing device

摘要

An improved vertical pin probing device is constructed with a housing with spaced upper and lower spacers of Invar(R), each having a thin sheet of silicon nitride ceramic material held in a window in the spacer by adhesive. The Invar spacers may be composed of Invar foils adhered to one another in a laminated structure. The sheets of silicon nitride have laser-drilled matching patterns of holes supporting probe pins and insulating the probe pins from the housing. The Invar spacers and silicon nitride ceramic sheets have coefficients of thermal expansion closely matching that of the silicon chip being probed, so that the probing device compensates for temperature variations over a large range of probing temperatures.