| 摘要 |
An apparatus for chemimechanically polishing a substrate by the steps of causing a chuck to hold the substrate having a metal film or devices such that the surface of a metal film or an insulating film of the substrate is caused to face upwards, pressing the surface of a polishing pad bonded to a joining plate pivotally borne by a spindle shaft having the axis arranged to be perpendicular to the substrate on the surface of the substrate, while supplying polishing solution to a boundary between the surfaces of the pad and the substrate, rotating the chuck holding the substrate and the polishing pad, and reciprocating the polishing pad horizontally on the surface of the substrate so that at least a portion of the metal film or the insulating film is removed. The apparatus for chemimechanically polishing a substrate includes a guide member disposed on the horizontal plane extended from the surface of the substrate held by the chuck and capable of supporting the surface of a portion of the polishing pad projecting over the outer surface of the substrate owing to reciprocating of the polishing pad on the substrate such that the guide member is provided independently from the chuck.
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