发明名称 |
Integrated semiconductor optic sensor device and corresponding manufacturing process |
摘要 |
The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including, implanting active areas on a semiconductor substrate to obtain a first integrated region of a corresponding photosensor; and forming a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a transparent metallic oxide having a high refraction index and a corresponding high dielectric constant. In this manner, due to the transparency of the high refraction index material, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer.
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申请公布号 |
US2002011638(A1) |
申请公布日期 |
2002.01.31 |
申请号 |
US20010972169 |
申请日期 |
2001.10.03 |
申请人 |
BORDOGNA MATTEO;LAURIN ENRICO;BERNARDI ORESTE |
发明人 |
BORDOGNA MATTEO;LAURIN ENRICO;BERNARDI ORESTE |
分类号 |
H01L27/146;(IPC1-7):H01L31/023 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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