| 摘要 |
An Inverting hysteretic transistor switch having an input terminal (13), an output terminal (17) and a ground terminal (15) includes, in some embodiment s (11), a metal-oxide semiconductor field effect transistor (MOSFET) having an on switching state and an off switching state. The MOSFET includes a drain terminal connected to the output terminal, a gate terminal and a source terminal connected to the ground terminal. The switch further includes a hysteresis circuit (12) connected to the input terminal and to the gate terminal of the MOSFET. In use, with an input voltage having low-to-high and high-to-low input voltage transitions applied to the input terminal, the hysteresis circuit switches the MOSFET to its on switching state at a first threshold voltage during low-to-high input voltage transitions. In addition, the hysteresis circuit switches the MOSFET to its off switching state at a second threshold voltage, which is less than the first threshold voltage, during high-to-low input voltage transitions.
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